MAC97 datasheet(2/8 Pages) ONSEMI

номер детали	MAC97

подробное описание детали	Sensitive Gate Triacs Silicon Bidirectional Thyristors

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MAC97 Series

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

75

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Maximum Lead Temperature for Soldering Purposes for 10 Seconds

TL

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = +110°C

IDRM, IRRM

−

10

100

mA

ON CHARACTERISTICS

Peak On−State Voltage

(ITM = ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)

VTM

−

1.9

V

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

MT2(−), G(+)

IGT

−

5.0

7.0

mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 W)

MT2(+), G(+) All Types

MT2(+), G(−) All Types

MT2(−), G(−) All Types

MT2(−), G(+) All Types

VGT

−

.66

.77

.84

.88

2.0

2.5

V

Gate Non−Trigger Voltage

(VD = 12 V, RL = 100 W, TJ = 110°C)

All Four Quadrants

VGD

0.1

−

V

Holding Current

(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

IH

−

1.5

10

mA

Turn-On Time

(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)

tgt

−

2.0

−

ms

DYNAMIC CHARACTERISTICS

Critical Rate−of−Rise of Commutation Voltage

(VD = Rated VDRM, ITM = .84 A,

Commutating di/dt = .3 A/ms, Gate Unenergized, TC = 50°C)

dV/dt(c)

−

5.0

−

V/

ms

Critical Rate of Rise of Off−State Voltage

(VD = Rated VDRM, TC = 110°C, Gate Open, Exponential Waveform

dv/dt

−

25

−

V/

ms

Аналогичный номер детали - MAC97

производитель	номер детали	датащи	подробное описание детали
Suntac Electronic Corp.	MAC97	1Mb / 6P	Sentive Gate Triacs Silicon Bidirectional Thyristors
SEMTECH ELECTRONICS LTD...	MAC97	178Kb / 2P	Silicon Bidirectional Triode Thyristors
ON Semiconductor	MAC97	133Kb / 8P	Sensitive Gate Triacs August, 2013 ??Rev. 10
ON Semiconductor	MAC97	133Kb / 8P	Sensitive Gate Triacs August, 2013 ??Rev. 10
Digitron Semiconductors	MAC97	289Kb / 5P	SILICON BIDIRECTIONAL THYRISTORS

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Аналогичное описание - MAC97

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MAC12SM	60Kb / 5P	Sensitive Gate Triacs Silicon Bidirectional Thyristors December, 2005 ??Rev. 3
	MAC4DLM	103Kb / 8P	Sensitive Gate Triacs Silicon Bidirectional Thyristors August, 2004 ??Rev. 2
	2N6071A	75Kb / 8P	Sensitive Gate Triacs Silicon Bidirectional Thyristors April, 2006 ??Rev. 7
	MAC228A	74Kb / 6P	Sensitive Gate Triacs Silicon Bidirectional Thyristors August, 2004 ??Rev. 3
	MAC4DLM	78Kb / 7P	Sensitive Gate Triacs Silicon Bidirectional Thyristors November, 2005 ??Rev. 3
	MAC08BT1	94Kb / 7P	Sensitive Gate Triacs Silicon Bidirectional Thyristors December, 2005 ??Rev. 5
	MAC8S	76Kb / 7P	Sensitive Gate Triacs Silicon Bidirectional Thyristors December, 2005 ??Rev. 5
	T2322B	56Kb / 4P	Sensitive Gate Triacs Silicon Bidirectional Thyristors May, 2006 ??Rev. 5
	MAC4DHM-1G	151Kb / 7P	Sensitive Gate Triacs Silicon Bidirectional Thyristors January, 2009 ??Rev. 6
New Jersey Semi-Conduct...	MAC97	100Kb / 2P	Sensitive Gate Triacs Silicon Bidirectional Thyristors
Kersemi Electronic Co.,...	MAC12SM	417Kb / 6P	Sensitive Gate Triacs Silicon Bidirectional Thyristors

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