KM641003B-10 datasheet(6/8 Pages) SAMSUNG

номер детали	KM641003B-10

подробное описание детали	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

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производитель	SAMSUNG [Samsung semiconductor]

домашняя страница	http://www.samsung.com/Products/Semiconductor

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KM641003B

CMOS SRAM

PRELIMINARY

Rev 2.0

- 6 -

February 1998

PRELIMINARY

Preliminary

NOTES(READ CYCLE)

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V OH or

VOL levels.

4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to

device.

5. Transition is measured

±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with CS=VIL.

7. Address valid prior to coincident with CS transition low.

8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e.

TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)

Address

CS

tWP(2)

tDW

tDH

Valid Data

WE

Data in

Data out

tWC

tWR(5)

tAW

tCW(3)

High-Z(8)

High-Z

OE

tOHZ(6)

tAS(4)

TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)

Address

CS

tWP1(2)

tDW

tDH

tOW

tWHZ(6)

Valid Data

WE

Data in

Data out

tWC

tAS(4)

tWR(5)

tAW

tCW(3)

(10)

(9)

High-Z(8)

High-Z

Аналогичный номер детали - KM641003B-10

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KM641003A	123Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
	KM641003A-12	123Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
	KM641003A-15	123Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
	KM641003A-20	123Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
	KM641003C	127Kb / 8P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating)

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Аналогичное описание - KM641003B-10

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	K6R1004C1B	128Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
	K6R1004C1A	127Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
	K6R1004C1C	101Kb / 9P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
	K6R1004C1D	188Kb / 9P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
	KM641003C	127Kb / 8P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating)
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