BU4506DX datasheet(3/6 Pages) PHILIPS

номер детали	BU4506DX

подробное описание детали	Silicon Diffused Power Transistor

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506DX

Fig.1. Switching times waveforms (16 kHz).

Fig.2. Switching times definitions.

Fig.3. Definition of anti-parallel diode V

fr and tfr.

Fig.4. Switching times test circuit.

Fig.5. High and low DC current gain.

Fig.6. High and low DC current gain.

IC

IB

VCE

ICsat

IB1

64us

26us

20us

t

TRANSISTOR

DIODE

IB2

+ 150 v nominal

adjust for ICsat

Lc

Cfb

D.U.T.

LB

IBend

-VBB

Rbe

ICsat

90 %

10 %

tf

ts

IB1

IC

IB

t

- IB2

0.01

0.1

1

10

1

10

100

IC / A

hFE

BU4506DF/X/Z

VCE = 1V

Ths = 25 C

Ths = 85 C

time

V

F

V

fr

V

F

I

F

fr

t

10%

5 V

I

F

0.01

0.1

1

10

1

10

100

IC / A

hFE

VCE = 5V

BU4506DF/X/Z

Ths = 25 C

Ths = 85 C

January 1999

3

Rev 1.000

Аналогичный номер детали - BU4506DX

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