2N4403RLRA datasheet(4/7 Pages) ONSEMI

номер детали	2N4403RLRA

подробное описание детали	General Purpose Transistors PNP Silicon

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4

Figure 5. Turn−On Time

IC, COLLECTOR CURRENT (mA)

20

30

50

5.0

10

7.0

Figure 6. Rise Time

IC, COLLECTOR CURRENT (mA)

70

100

10

20

50

70

100

200

300

500

30

IC/IB = 10

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VBE(off) = 2 V

td @ VBE(off) = 0

20

30

50

5.0

10

7.0

70

100

10

20

50

70 100

200

300

500

30

VCC = 30 V

IC/IB = 10

Figure 7. Storage Time

IC, COLLECTOR CURRENT (mA)

10

20

50

70

100

200

300

500

30

100

20

70

50

200

30

IC/IB = 10

IC/IB = 20

IB1 = IB2

ts′ = ts − 1/8 tf

6

8

10

0

4

2

0.1

2.0 5.0

10

20

50

1.0

0.5

0.2

0.01 0.02 0.05

100

Figure 8. Frequency Effects

f, FREQUENCY (kHz)

SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

IC = 1.0 mA, RS = 430 W

IC = 500 mA, RS = 560 W

IC = 50 mA, RS = 2.7 kW

IC = 100 mA, RS = 1.6 kW

RS = OPTIMUM SOURCE RESISTANCE

50

100

200

500

1k

2k

5k

10k 20k

50k

6

8

10

0

4

2

Figure 9. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

f = 1 kHz

IC = 50 mA

100 mA

500 mA

1.0 mA

Аналогичный номер детали - 2N4403RLRA

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	2N4403RLRA	106Kb / 7P	General Purpose Transistors March, 2007 ??Rev. 3
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