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STGW40NC60WD датащи(PDF) 5 Page - STMicroelectronics

номер детали STGW40NC60WD
подробное описание детали  N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGW40NC60WD датащи(HTML) 5 Page - STMicroelectronics

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STGW40NC60WD
Electrical characteristics
5/14
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 15)
33
12
260
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay timE
Current rise time
Turn-on current slope
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 15)
32
14
2300
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 30A,
RGE = 10Ω , VGE =15V,
TJ=25°C (see Figure 15)
26
168
36
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 30A,
RGE=10Ω , VGE =15V,
Tj=125 °C (see Figure 15)
54
213
67
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG=10Ω, VGE= 15V,
Tj= 25°C (see Figure 15)
302
394
651
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG=10Ω, VGE= 15V,
Tj= 125°C (see Figure 15)
553
750
1303
µJ
µJ
µJ


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