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MJE13003 датащи(PDF) 1 Page - ON Semiconductor |
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MJE13003 датащи(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Publication Order Number: MJE13003/D MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features • Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C tc @ 1 A, 100_C is 290 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO(sus) 400 Vdc Collector−Emitter Voltage VCEV 700 Vdc Emitter Base Voltage VEBO 9 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 1.5 3 Adc Base Current − Continuous − Peak (Note 1) IB IBM 0.75 1.5 Adc Emitter Current − Continuous − Peak (Note 1) IE IEM 2.25 4.5 Adc Total Power Dissipation @ TA = 25_C Derate above 25 _C PD 1.4 11.2 W mW/ _C Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 40 320 W mW/ _C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.12 _C/W Thermal Resistance, Junction−to−Ambient RqJA 89 _C/W Maximum Load Temperature for Soldering Purposes: 1/8 ″ from Case for 5 Seconds TL 275 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping ORDERING INFORMATION MJE13003 TO−225 500 Units/Box 1.5 AMPERES NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS http://onsemi.com MJE13003G TO−225 (Pb−Free) 500 Units/Box TO−225 CASE 77 STYLE 3 2 1 3 MARKING DIAGRAM YWW JE 13003G Y = Year WW = Work Week JE13003 = Device Code G = Pb−Free Package 1 BASE 2 COLLECTOR 3 EMITTER |
Аналогичный номер детали - MJE13003 |
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Аналогичное описание - MJE13003 |
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