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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SD1898 датащи(PDF) 2 Page - Unisonic Technologies |
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2SD1898 датащи(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page  UTC2SD1898 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-030,A ELECTRICAL CHARACTERISTICS CURVES 0 0.2 1000 0.1 Base to Emitter Voltage:V BE (V) Figure 1.Grounded Emitter Propagation Characteristics Collector Current : Ic(mA) Figure 3.DC Current Gain vs.Collector Current 0.4 0.6 0.8 1.6 1.4 1.2 1.0 1 10 0 1.0 0 Collector to Emitter Voltage:V CE (V) Figure 2.Grounded Emitter Output Characteristics 0.2 24 8 10 6 0.4 0.6 0.8 IB =0mA Ta=25 ℃ 1mA 12 5 10 20 5 Emitter Current: -I E (mA) Figure 4.Collector-emitter Saturation Voltage vs.Collector Current 2 50 100200 5001000 10 20 50 100 Collector To Base Voltage :V CB (V) Figure 6.CollectorOutput Capacitance vs.Collector-Base Voltage 100 2mA 3mA 4mA 5mA 6mA Collector Current : Ic(mA) 200 500 Ta=25 ℃ V CE = 5V Figure 5. Gain Bandwidth Product vs.Emitter Current 0.1 0.2 0.5 1 2 1 510 20 50 100 10 100 Ta=25 ℃ f=1MHz 1000 I E=0A 1.8 2.0 VCE = 5V Ta=25 ℃ 010 0 100 1000 100 1000 Ta=25℃ VCE = 3V VCE = 1V 010 0.01 100 1000 0.1 Ta=25 ℃ 0.02 0.05 0.2 0.5 1.0 2.0 Ic/IB=20/1 Ic/IB=10/1 I c=0A Emitter To Base Voltage :V CB (V) |
Аналогичный номер детали - 2SD1898 |
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Аналогичное описание - 2SD1898 |
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