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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC2881 датащи(PDF) 1 Page - Unisonic Technologies |
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2SC2881 датащи(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UTC2SC2881 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R208-032,A VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES * High voltage: VCEO= 120V * High transition frequency: fT=120MHz(typ.) * Pc=1.0 ~ 2.0 W(mounted on ceramic substrate) * Complementary to 2SA1201 SOT-89 1 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA PC 500 Collector power dissipation PC(Note 1) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 ~ 150 °C Note 1: Mounted on ceramic substrate( 250mm2×0.8t ) ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, Ic=0 5 V Collector cut-off current ICBO VCB=120V, IE=0 0.1 μ A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μ A DC current gain hFE VCE=5V, IC=100mA 80 240 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1.0 V Base-emitter voltage VBE VCE=5V, IC=500mA 1.0 V Transition frequency fT VCE=5V, IC=100mA 120 MHz Collector output capacitance Cob VCB=10V, f=1MHz, IE=0 30 pF CLASSIFICATION OF hFE RANK O Y RANGE 80 - 160 120 - 240 |
Аналогичный номер детали - 2SC2881 |
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Аналогичное описание - 2SC2881 |
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