8550S

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

www.unisonic.com.tw

QW-R206-002,D

PARAMETER

SYMBOL

RATING

UNITS

Collector-Base Voltage

-30

V

Collector-Emitter Voltage

-20

V

Emitter-Base Voltage

-5

V

SOT-23

350

mW

Collector Dissipation(Ta=25

)

℃

TO-92

1

W

Collector Current

-700

mA

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

℃ unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

Ic=-100

µA,I

-30

V

Collector-Emitter Breakdown Voltage

-20

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cut-off Current

-1

uA

Emitter Cut-off Current

-100

nA

100

120

400

DC Current Gain

40

Collector-Emitter Saturation Voltage

-0.5

V

Base-Emitter Saturation Voltage

-1.2

V

Base-Emitter Saturation Voltage

-1.0

V

Current Gain Bandwidth Product

100

MHz

Output Capacitance

Cob

9.0

pF

RANK

C

D

E

RANGE

120-200

160-300

280-400