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BYD63 датащи(PDF) 2 Page - NXP Semiconductors

номер детали BYD63
подробное описание детали  Ripple blocking diode
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD63 датащи(HTML) 2 Page - NXP Semiconductors

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1996 Jun 10
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
300
V
VR
continuous reverse voltage
300
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
0.85
A
averaged over any 20 ms period;
Tamb = 65 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
0.45
A
IFRM
repetitive peak forward current
Ttp = 55 °C
8.25
A
Tamb = 65 °C
4.45
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
5
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C


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