поискавой системы для электроныых деталей |
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BYD63 датащи(PDF) 2 Page - NXP Semiconductors |
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BYD63 датащи(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Jun 10 2 Philips Semiconductors Product specification Ripple blocking diode BYD63 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed minimum turn-on time for absorbing forward current transients and oscillations • Specially designed as rectifier in the auxiliary power supply in e.g. switched mode power supplies • Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD81) and symbol. handbook, 4 columns a k MAM123 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 300 V VR continuous reverse voltage − 300 V IF(AV) average forward current averaged over any 20 ms period; Ttp = 55 °C; lead length = 10 mm; see Fig.2; see also Fig.4 − 0.85 A averaged over any 20 ms period; Tamb = 65 °C; PCB mounting (Fig.8); see Fig.3; see also Fig.4 − 0.45 A IFRM repetitive peak forward current Ttp = 55 °C − 8.25 A Tamb = 65 °C − 4.45 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 5 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C |
Аналогичный номер детали - BYD63 |
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Аналогичное описание - BYD63 |
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