поискавой системы для электроныых деталей |
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BZX55-6V8 датащи(PDF) 2 Page - NXP Semiconductors |
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BZX55-6V8 датащи(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Apr 26 2 Philips Semiconductors Product specification Voltage regulator diodes BZX55 series FEATURES • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZX55-C2V4 to BZX55-C75). Fig.1 Simplified outline (SOD27; DO-35) and symbol. The diodes are type branded. handbook, halfpage MAM239 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; lead length 8 mm. ELECTRICAL CHARACTERISTICS Total series Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj =25 °C prior to surge see Table “Per type” Ptot total power dissipation Tamb =50 °C; note 1 − 400 mW Tamb =50 °C; note 2 − 500 mW PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj =25 °C prior to surge − 40 W tp = 8.3 ms; square wave; Tj ≤ 150 °C prior to surge − 30 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 100 mA; see Fig.4 − 1.0 V |
Аналогичный номер детали - BZX55-6V8 |
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Аналогичное описание - BZX55-6V8 |
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