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STD03N датащи(PDF) 2 Page - Allegro MicroSystems |
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STD03N датащи(HTML) 2 Page - Allegro MicroSystems |
2 / 7 page Darlington Transistors for Audio Amplifiers STD03N and STD03P 2 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature of +25°C, unless otherwise stated. ABSOLUTE MAXIMUM RATINGS at TA = 25°C Characteristic Symbol Rating Unit Collector-Base Voltage1 VCBO 160 V Collector-Emitter Voltage1 VCEO 160 V Emitter-Base Voltage1 VEBO 5V Collector Current1 IC 15 A Base Current1 IB 1A Collector Power Dissipation2 PC 160 W Diode Forward Current IF 10 mA Junction Temperature TJ 150 °C Storage Temperature Tstg –55 to150 °C 1 For PNP type (STD03P), voltage and current values are negative. 2 TC = 25°C. SELECTION GUIDE Part Number Type hFE Rating Packing STD03N* NPN Range O: 5000 to 12000 Bulk, 100 pieces Range Y: 8000 to 20000 STD03P* PNP Range O: 5000 to 12000 Range Y: 8000 to 20000 *Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability. ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Symbol Test Conditions Min. Typ. Max. Unit Collector-Cutoff Current1 ICBO VCB = 160 V – – 100 μA Emitter Cutoff Current1 IEBO VEB = 5 V – – 100 μA Collector-Emitter Voltage1 VCEO IC = 30 mA 160 – – V DC Current Transfer Ratio2,3 hFE VCE = 4 V, IC = 10 A 5000 – 20000 – Collector-Emitter Saturation Voltage VCE(sat) IC = 10 A, IB = 10 mA – – –2.0 V Base-Emitter Saturation Voltage VBE(sat) IC = 10 A, IB = 10 mA – – –2.5 V Base-Emitter Voltage VBE STD03N VCE = 20 V, IC = 40 mA – 1190 – mV STD03P VCE = –20 V, IC = –40 mA – 1200 – mV Diode Forward Voltage VF STD03N IF = 2.5 mA – 705 – mV STD03P IF = 2.5 mA – 1540 – mV 1 For PNP type (STD03P), voltage and current values are negative. 2 hFE rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y). 3 When the transistor is used in pairs, the following conditions must be satisfied: Total VF ≤ Total VBE of the transistors (the above measurement conditions shall be applied), and ΔV = 0 to 500 mV. |
Аналогичный номер детали - STD03N |
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Аналогичное описание - STD03N |
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