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NJ1800DL датащи(PDF) 1 Page - InterFET Corporation |
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NJ1800DL датащи(HTML) 1 Page - InterFET Corporation |
1 / 2 page F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance ¥ Low-Noise Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig 10 mA Operating Junction Temperature, Tj +150°C Storage Temperature, Ts – 65°C to +175°C Device in this Databook based on the NJ1800DL Process. Datasheet IF1801 At 25°C free air temperature: NJ1800DL Process Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 15 – 25 V IG = – 1 µA, VDS = ØV Reverse Gate Leakage Current IGSS – 30 – 100 pA VGS = – 10V, VDS = ØV Drain Saturation Current (Pulsed) IDSS 50 800 mA VDS = 10V, VGS = ØV Gate Source Cutoff Voltage VGS(OFF) – 0.1 – 4 V VDS = 10V, ID = 1 nA Dynamic Electrical Characteristics Forward Transconductance (Pulsed) gfs 350 mS VDS = 10V, VGS = ØV f = 1 kHz Input Capacitance Ciss 160 pF ID = 1 mA, VGS = ØV f = 1 MHz Feedback Capacitance Crss 50 pF VDS = 10V, VGS = ØV f = 1 MHz Equivalent Noise Voltage ¯eN 0.7 nV/ √HZ V DG = 4 V, ID = 5 mA f = 1 kHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com G D Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. S Databook.fxp 1/13/99 2:09 PM Page F-46 |
Аналогичный номер детали - NJ1800DL |
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Аналогичное описание - NJ1800DL |
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