1N6775 datasheet(1/1 Pages) MICROSEMI

номер детали	1N6775

подробное описание детали	ULTRAFAST SILICON POWER RECTIFIER

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TECHNICAL DATA

ULTRAFAST SILICON POWER RECTIFIER

Qualified per MIL-PRF-19500/646

Devices

Qualified Level

1N6774

1N6775

1N6776

1N6777

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol 1N6774 1N6775 1N6776 1N6777 Unit

Working Peak Reverse Voltage

VRWM

50

100

150

200

Vdc

Forward Current

TC = +100

°C(1)

IF

15

Adc

Forward Current Surge Peak TP = 8.3

0C

IFSM

180

Apk

Operating & Storage Junction Temperature

Top, Tstg

-65 to +150

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

2.0

0C/W

Thermal Resistance, Junction-to-Ambient

RθJA

40

0C/W

1) Derate at 300 mA/

0C above TC = +1000C

TO-257*

(2-PIN-ISOLATED)

*See appendix A for

ELECTRICAL CHARACTERISTICS (TC = +25

0C Unless Otherwise Noted)

package

outline

Characteristics

Symbol

Min.

Max.

Unit

Forward Voltage

IF = 8.0 Adc, pulsed

IF = 15 Adc, pulsed

VF

1.00

1.15

Vdc

Reverse Current Leakage

VR = 0.8 of VRWM

IR

10

µAdc

Thermal Impedance

IM =15 mAdc; IH = 9.9 Adc;

t

H = 200 ms;

t

MD = 35

µs; V

H = 1

Vdc

ZØJX

1.8

0C/W

Breakdown Voltage

IR = 10

µAdc

1N6774

1N6775

1N6776

1N6777

VBR

50

100

150

200

Vdc

Junction Capacitance

VR = 5.0 Vdc, f = 1.0 MHz

CJ

300

pF

Reverse Recovery Time

IF = 1.0 Adc; di/dt = 50 A/

µs

trr

35

ηs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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