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2N3702 датащи(PDF) 1 Page - Fairchild Semiconductor |
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2N3702 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -25 V BV(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -40 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -20V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEB = -3.0V, IC = 0 -100 nA On Characteristics * hFE DC Current Gain VCE= -5.0V, IC = -50mA 60 300 VCE(sat) Collector-Emitter Saturation Voltage IC = -50mA, IB = -5.0mA -0.25 V VBE(sat) Base-Emitter Saturation Voltage VCE= -5.0V, IC = -50mA -0.6 -1.0 V Small Signal Characteristics Cob Current Gain Bandwidth Product VCB = -10V, f = 1.0MHz 12 pF fT Output Capacitance IE = -50mA, VCE = -5.0V 100 MHz Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W 2N3702 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 68. • See PN200 for Characteristics. TO-92 1. Emitter 2. Collector 3. Base 1 |
Аналогичный номер детали - 2N3702_02 |
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Аналогичное описание - 2N3702_02 |
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