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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF3000PBF датащи(PDF) 4 Page - International Rectifier |
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IRF3000PBF датащи(HTML) 4 Page - International Rectifier |
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4 / 8 page  IRF3000PbF 4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 10000 100000 Coss Crss Ciss VGS = 0V, f = 1 MHZ C iss = Cgs + Cgd , C ds SHORTED Crss = Cgd Coss = Cds + Cgd 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-toDrain Voltage (V) 0.1 1.0 10.0 100.0 TJ = 25°C TJ = 150°C VGS = 0V 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 0 5 10 15 20 25 30 Q G Total Gate Charge (nC) 0 4 8 12 16 20 VDS= 240V VDS= 150V VDS= 60V ID= 0.96A FOR TEST CIRCUIT SEE FIGURE 14 |
Аналогичный номер детали - IRF3000PBF |
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Аналогичное описание - IRF3000PBF |
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