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FDD5614P датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDD5614P
подробное описание детали  60V P-Channel PowerTrench짰 MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5614P датащи(HTML) 2 Page - Fairchild Semiconductor

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FDD5614P Rev C1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = –30 V,
ID = –4.5 A
90
mJ
IAR
Maximum Drain-Source Avalanche
Current
–4.5
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
–60
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
–49
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –48 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
–1
–1.6
–3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
4
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
ID = –4.5 A
VGS = –4.5 V,
ID = –3.9 A
VGS = –10 V,ID = –4.5 A,TJ=125°C
76
99
137
100
130
185
m
ID(on)
On–State Drain Current
VGS = –10 V,
VDS = –5 V
–20
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –3 A
8
S
Dynamic Characteristics
Ciss
Input Capacitance
759
pF
Coss
Output Capacitance
90
pF
Crss
Reverse Transfer Capacitance
VDS = –30 V,
V GS = 0 V,
f = 1.0 MHz
39
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
7
14
ns
tr
Turn–On Rise Time
10
20
ns
td(off)
Turn–Off Delay Time
19
34
ns
tf
Turn–Off Fall Time
VDD = –30 V,
ID = –1 A,
VGS = –10 V,
RGEN = 6 Ω
12
22
ns
Qg
Total Gate Charge
15
24
nC
Qgs
Gate–Source Charge
2.5
nC
Qgd
Gate–Drain Charge
VDS = –30V,
ID = –4.5 A,
VGS = –10 V
3.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–3.2
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –3.2 A
(Note 2)
–0.8
–1.2
V


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