поискавой системы для электроныых деталей |
|
FDD5690 датащи(PDF) 2 Page - Fairchild Semiconductor |
|
FDD5690 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDD5690,Rev.C Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics WDSS Single Pulse Drain-Source Avalanche Energy VDD = 30 V, ID = 30 A 90 mJ IAR Maximum Drain-Source Avalanche Current 30 A BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 57 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 22.5 4 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C -6 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9 A VGS = 10 V, ID = 9 A, TJ = 125 °C VGS = 6 V, ID = 8 A 0.023 0.032 0.026 0.027 0.048 0.032 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 25 A gFS Forward Transconductance VDS = 5 V, ID = 9 A 24 S Dynamic Characteristics Ciss Input Capacitance 1110 pF Coss Output Capacitance 150 pF Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V f = 1.0 MHz 75 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 10 18 ns tr Turn-On Rise Time 9 18 ns td(off) Turn-Off Delay Time 24 39 ns tf Turn-Off Fall Time VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω 10 18 ns Qg Total Gate Charge 23 32 nC Qgs Gate-Source Charge 4 nC Qgd Gate-Drain Charge VDS = 30 V, ID = 9 A VGS = 10 V, 6.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2.3 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.75 1.2 V Notes: 1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96oC/W on a minimum mounting pad. |
Аналогичный номер детали - FDD5690_02 |
|
Аналогичное описание - FDD5690_02 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |