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FDD5690 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDD5690 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDD5690,Rev.C Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 0.0001 0.001 0.01 0.1 1 10 100 300 0.0001 0.001 0.01 0.1 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R = 96°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0 500 1000 1500 2000 2500 0 102030 405060 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V 0 20 40 60 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 96 o C/W TA = 25 o C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 96 o C/W TA = 25 o C DC 10S 1S 100ms 10ms 1ms 100 µs 0 2 4 6 8 10 0 5 10 15 20 25 Qg, GATE CHARGE (nC) ID = 9A VDS = 10V 20V 30V |
Аналогичный номер детали - FDD5690 |
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Аналогичное описание - FDD5690 |
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