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IRL3102PBF датащи(PDF) 1 Page - International Rectifier |
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IRL3102PBF датащи(HTML) 1 Page - International Rectifier |
1 / 7 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 61 ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 39 A IDM Pulsed Drain Current 240 PD @TC = 25°C Power Dissipation 89 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 10 V VGSM Gate-to-Source Voltage 14 V (Start Up Transient, tp = 100µs) EAS Single Pulse Avalanche Energy 220 mJ IAR Avalanche Current 35 A EAR Repetitive Avalanche Energy 8.9 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and-55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) 07/30/04 IRL3102PbF HEXFET® Power MOSFET PD- 95658 These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry. S D G Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case 1.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 Thermal Resistance VDSS = 20V RDS(on) = 0.013Ω ID = 61A TO-220AB Description l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free |
Аналогичный номер детали - IRL3102PBF |
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Аналогичное описание - IRL3102PBF |
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