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NZT6726 датащи(PDF) 1 Page - Fairchild Semiconductor |
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NZT6726 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page TN6726A PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C NZT6726 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN6726A *NZT6726 PD Total Device Dissipation Derate above 25 °C 1.0 8.0 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 50 °C/W RθJA Thermal Resistance, Junction to Ambient 125 125 °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 1997 Fairchild Semiconductor Corporation B C C SOT-223 E TO-226 C B E NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. |
Аналогичный номер детали - NZT6726 |
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Аналогичное описание - NZT6726 |
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