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FM200TU-3A датащит (Datasheet) 3 Page - Mitsubishi Electric Semiconductor

№ деталь FM200TU-3A
подробность  HIGH POWER SWITCHING USE INSULATED PACKAGE
скачать  5 Pages
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производитель  MITSUBISHI [Mitsubishi Electric Semiconductor]
домашняя страница  http://www.mitsubishichips.com
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 3 page
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May 2006
PERFORMANCE CURVES
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
0
0
0.4
0.8
1.2
1.6
2.0
0
150
100
50
200
579
11
13
15
0
0.5
1.0
1.5
2.0
2.5
3.0
048
12
1620
0
4
2
6
8
10
12
040
80
120
160
20
60
100
140
0
3
4
1
2
5
6
7
040
80
120
160
20
60
100
140
10–1 2
100
35 7
2
101
35 7
2
102
35 7
40
80
120
160
200
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
VGS = 20V
Tch = 25
°C
Tch = 25
°C
VGS = 12V
VGS = 15V
15V
12V
10V
9V
ID = 100A
ID = 100A
ID = 50A
ID = 200A
VDS = 10V
Tch = 25
°C
Tch = 125
°C
VDS = 10V
ID = 10mA
Ciss
Coss
Crss
VGS = 0V
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CHANNEL TEMPERATURE Tch (
°C)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
(TYPICAL)
CHANNEL TEMPERATURE Tch (
°C)
GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
(TYPICAL)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
Chip
Chip
Chip
Chip




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