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NE32500M датащи(PDF) 2 Page - California Eastern Labs |
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NE32500M датащи(HTML) 2 Page - California Eastern Labs |
2 / 3 page NE32500 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 IDS Drain Current mA IDSS PT Total Power Dissipation2 mW 200 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature, TA (°C) TYPICAL PERFORMANCE CURVES (TA = 25°C) Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on Alumina heatsink (size: 3 x 3 x 0.6t) NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY Drain Current, ID (mA) Frequency, f (GHz) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Drain to Source Voltage, VDS (V) VDS = 2 V f = 12 GHz GA NF 2.0 1.5 1.0 0.5 0 10 20 30 14 13 12 11 10 VGS = 0 V -0.2 V -0.4 V -0.8 V -0.6 V 100 80 60 40 20 0 1.5 3.0 1.0 0.5 0 12 46 8 10 14 20 30 24 20 16 12 8 4 GA NF VDS = 2 V ID = 10 mA 250 200 150 100 50 0 0 50 100 150 200 250 60 40 20 0 -2.0 -1.0 0 VDS = 2 V Gate to Source Voltage, VGS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE |
Аналогичный номер детали - NE32500M |
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Аналогичное описание - NE32500M |
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