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BAT54J датащи(PDF) 3 Page - NXP Semiconductors |
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BAT54J датащи(HTML) 3 Page - NXP Semiconductors |
3 / 8 page BAT54J_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 8 March 2007 3 of 8 NXP Semiconductors BAT54J Schottky barrier single diode 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Reflow soldering is the only recommended soldering method. [3] Soldering point of cathode tab. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1][2] - - 230 K/W Rth(j-sp) thermal resistance from junction to solder point [3] --55 K/W Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF = 0.1 mA - - 240 mV IF = 1 mA - - 320 mV IF = 10 mA - - 400 mV IF = 30 mA - - 500 mV IF = 100 mA - - 800 mV IR reverse current VR = 25 V --2 µA Cd diode capacitance VR = 1 V; f = 1 MHz - - 10 pF |
Аналогичный номер детали - BAT54J |
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Аналогичное описание - BAT54J |
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