IRFEA240

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

2.5

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

11

ISM

Pulse Source Current (Body Diode) Œ

——

44

VSD

Diode Forward Voltage

—

—

1.5

V

trr

Reverse Recovery Time

—

—

470

nS

Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

6.5

µCVDD ≤ 25V 

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

—

—

V

VGS = 0V, ID = 1mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.25

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.18

Ω

VGS = 10V, ID = 11A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

6.0

—

—

S ( )VDS = 25V, IDS = 11A 

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS= 160V ,VGS=0V

—

—

250

VDS = 160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

84

VGS =10V, ID = 11A

Qgs

Gate-to-Source Charge

—

—

17

nC

VDS = 100V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

41

Turn-On Delay Time

—

—

25

VDD = 100V, ID = 11A

tr

Rise Time

—

—

196

RG = 9.1Ω

Turn-Off Delay Time

—

—

80

tf

Fall Time

—

—

130

LS + LD

Total Inductance

—

6.1

—

Measured from the center of

drain pad to center of source pad

Ciss

Input Capacitance

—

1340

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

434

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

134

—

nA



nH

ns

µA