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SI4416DY датащи(PDF) 6 Page - NXP Semiconductors |
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SI4416DY датащи(HTML) 6 Page - NXP Semiconductors |
6 / 13 page Philips Semiconductors Si4416DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 05 June 2001 6 of 13 9397 750 08299 © Philips Electronics N.V. 2001. All rights reserved. Tj =25 °C and 150 °C; VDS > ID xRDSon Fig 5. Output characteristic; drain current as function of drain-source voltage; typical values. Fig 6. Transfer characteristic: drain current as function of gate-source voltage; typical values Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03af21 0 10 20 30 40 50 01 23 4 VDS (V) ID (A) VGS= 3 V 3.5 V 5V 10V 4 V 4.5V 03af23 0 10 20 30 40 50 012 345 VGS (V) ID (A) VDS > ID x RDSon Tj = 150 ºC 25 ºC 03af22 0 0.01 0.02 0.03 0.04 0.05 0 1020 304050 ID (A) RDSon ( Ω) Tj = 25 ºC VGS = 4.5 V 10 V 03ad57 0 0.4 0.8 1.2 1.6 2 -60 0 60 120 180 Tj (ºC) a a R DSon R DSon 25 C ° () ---------------------------- = |
Аналогичный номер детали - SI4416DY |
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Аналогичное описание - SI4416DY |
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