поискавой системы для электроныых деталей |
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SI4800 датащи(PDF) 6 Page - NXP Semiconductors |
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SI4800 датащи(HTML) 6 Page - NXP Semiconductors |
6 / 13 page Philips Semiconductors Si4800 N-channel enhancement mode field-effect transistor Product data Rev. 01 — 13 July 2001 6 of 13 9397 750 08412 © Philips Electronics N.V. 2001. All rights reserved. Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03af85 0 10 20 30 40 0 0.5 1 1.5 2 VDS (V) ID (A) 3.5 V 5 V 4.5 V 4 V 10 V 3 V VGS = 2.5 V Tj = 25 ºC 03af87 0 10 20 30 40 012345 VGS (V) ID (A) VDS > ID x RDSon Tj = 150 ºC 25 ºC 03af86 0 0.01 0.02 0.03 0 10203040 ID (A) RDSon ( Ω) Tj = 25 ºC VGS = 10 V 5 V 4.5 V 03ad57 0 0.4 0.8 1.2 1.6 2 -60 0 60 120 180 Tj (ºC) a a R DSon R DSon 25 C ° () ---------------------------- = |
Аналогичный номер детали - SI4800 |
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Аналогичное описание - SI4800 |
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