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SI4410DY датащи(PDF) 2 Page - International Rectifier |
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SI4410DY датащи(HTML) 2 Page - International Rectifier |
2 / 8 page Si4410DY 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Diode Conduction) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.7 1.1 V TJ = 25°C, IS = 2.3A, VGS = 0V trr Reverse Recovery Time ––– 50 80 ns TJ = 25°C, IF = 2.3A Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics ––– ––– ––– ––– 50 2.3 A S D G When mounted on FR4 Board, t ≤10 sec Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.010 0.0135 VGS = 10V, ID = 10A ––– 0.015 0.020 VGS = 4.5V, ID = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance ––– 35 ––– S VDS = 15V, ID = 10A ––– ––– 1.0 VDS = 30V, VGS = 0V ––– ––– 25 VDS = 30V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 30 45 ID = 10A Qgs Gate-to-Source Charge ––– 5.4 ––– nC VDS = 15V Qgd Gate-to-Drain ("Miller") Charge ––– 6.5 ––– VGS = 10V, See Fig. 10 td(on) Turn-On Delay Time ––– 11 ––– VDD = 25V tr Rise Time ––– 7.7 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω tf Fall Time ––– 44 ––– RD = 25Ω, Ciss Input Capacitance ––– 1585 ––– VGS = 0V Coss Output Capacitance ––– 739 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 106 ––– ƒ = 1.0MHz, See Fig. 9 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Starting TJ = 25°C, L = 8.0mH RG = 25Ω, IAS = 10A. (See Figure 15)
ISD ≤2.3A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C |
Аналогичный номер детали - SI4410DY |
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Аналогичное описание - SI4410DY |
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