поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

SI4410DY датащи(PDF) 2 Page - International Rectifier

номер детали SI4410DY
подробное описание детали  HEXFET Power MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

SI4410DY датащи(HTML) 2 Page - International Rectifier

  SI4410DY Datasheet HTML 1Page - International Rectifier SI4410DY Datasheet HTML 2Page - International Rectifier SI4410DY Datasheet HTML 3Page - International Rectifier SI4410DY Datasheet HTML 4Page - International Rectifier SI4410DY Datasheet HTML 5Page - International Rectifier SI4410DY Datasheet HTML 6Page - International Rectifier SI4410DY Datasheet HTML 7Page - International Rectifier SI4410DY Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Si4410DY
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Diode Conduction)
ƒ
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
0.7
1.1
V
TJ = 25°C, IS = 2.3A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
50
80
ns
TJ = 25°C, IF = 2.3A
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
50
2.3
A
S
D
G
ƒ When mounted on FR4 Board, t ≤10 sec
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.029 –––
V/°C
Reference to 25°C, ID = 1mA
––– 0.010 0.0135
VGS = 10V, ID = 10A
‚
––– 0.015 0.020
VGS = 4.5V, ID = 5.0A
‚
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
–––
35
–––
S
VDS = 15V, ID = 10A
–––
–––
1.0
VDS = 30V, VGS = 0V
–––
–––
25
VDS = 30V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
30
45
ID = 10A
Qgs
Gate-to-Source Charge
–––
5.4
–––
nC
VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
6.5
–––
VGS = 10V, See Fig. 10
‚
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 25V
tr
Rise Time
–––
7.7
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
38
–––
RG = 6.0Ω
tf
Fall Time
–––
44
–––
RD = 25Ω,
‚
Ciss
Input Capacitance
––– 1585 –––
VGS = 0V
Coss
Output Capacitance
–––
739
–––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
106
–––
ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
„ Starting TJ = 25°C, L = 8.0mH
RG = 25Ω, IAS = 10A. (See Figure 15)
… ISD ≤2.3A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C


Аналогичный номер детали - SI4410DY

производительномер деталидатащиподробное описание детали
logo
NXP Semiconductors
SI4410DY PHILIPS-SI4410DY Datasheet
266Kb / 13P
   N-channel enhancement mode field-effect transistor
Rev. 02-05 July 2001
logo
Fairchild Semiconductor
SI4410DY FAIRCHILD-SI4410DY Datasheet
239Kb / 3P
   Single N-Channel Logic Level PowerTrench MOSFET
logo
Vishay Siliconix
SI4410DY VISHAY-SI4410DY Datasheet
61Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. L, 03-May-04
logo
NXP Semiconductors
SI4410DY NXP-SI4410DY Datasheet
376Kb / 12P
   N-channel TrenchMOS logic level FET
Rev. 03 ??4 December 2009
logo
Guangdong Kexin Industr...
SI4410DY KEXIN-SI4410DY Datasheet
1Mb / 4P
   N-Channel MOSFET
More results

Аналогичное описание - SI4410DY

производительномер деталидатащиподробное описание детали
logo
International Rectifier
IRF7316 IRF-IRF7316 Datasheet
237Kb / 7P
   HEXFET POWER MOSFET
IRF6215 IRF-IRF6215 Datasheet
125Kb / 8P
   HEXFET Power MOSFET
IRF530NS IRF-IRF530NS Datasheet
618Kb / 10P
   HEXFET Power MOSFET
IRLMS2002 IRF-IRLMS2002 Datasheet
95Kb / 8P
   HEXFET Power MOSFET
IRFH5301PBF IRF-IRFH5301PBF Datasheet
309Kb / 8P
   HEXFET Power MOSFET
IRLR8726PBF IRF-IRLR8726PBF_09 Datasheet
360Kb / 11P
   HEXFET Power MOSFET
IRLML2502GPBF IRF-IRLML2502GPBF Datasheet
180Kb / 8P
   HEXFET Power MOSFET
IRF7304QPBF IRF-IRF7304QPBF_10 Datasheet
248Kb / 9P
   HEXFET POWER MOSFET
IRFS3107-7PPBF IRF-IRFS3107-7PPBF Datasheet
320Kb / 9P
   HEXFET Power MOSFET
IRFH5106PBF IRF-IRFH5106PBF Datasheet
339Kb / 8P
   HEXFET Power MOSFET
IRFH5406PBF IRF-IRFH5406PBF Datasheet
305Kb / 8P
   HEXFET Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com