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1N6627 датащи(PDF) 1 Page - Microsemi Corporation |
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1N6627 датащи(HTML) 1 Page - Microsemi Corporation |
1 / 4 page VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSD A L E DIVISION 1N6626 thru 1N6631 DESCRIPTION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF- 19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. “E” Package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Popular JEDEC registered 1N6626 to 1N6631 series • Voidless hermetically sealed glass package • Extremely robust construction • Triple-layer passivation • Internal “Category I” Metallurgical bonds • JAN, JANTX, and JANTXV available per MIL-PRF- 19500/590 • Further options for screening in accordance with MIL- PRF-19500 for JANS by using a “MSP” prefix, e.g. MSP6626, MSP6629, etc. • Surface mount equivalents also available in a square end- cap MELF configuration with “US” suffix (see separate data sheet for 1N6626US thru 1N6631US) • Ultrafast recovery rectifier series 200 to 1000 V • Military and other high-reliability applications • Switching power supplies or other applications requiring extremely fast switching & low forward loss • High forward surge current capability • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction Temperature: -65 oC to +175oC • Storage Temperature: -65 oC to +175oC • Peak Forward Surge Current @ 25 oC: 75A (except 1N6631 which is 60A) Note: Test pulse = 8.3ms, half-sine wave. • Average Rectified Forward Current (IO) at TL= +75 oC (L=.375 inch from body): 1N6626 thru 1N6628 4.0A 1N6629 thru 1N6630 3.0A 1N6631 2.5A (Derate linearly at 1.0%/ oC for TL> +75oC) • Average Rectified Forward Current (IO) at TA=25 oC: 1N6626 thru 1N6628 2.0A 1N6629 thru 1N6631 1.4A (Derate linearly at 0.67%/ oC for TA>+25oC. This IO rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded.) • Thermal Resistance L= 0.375 inch (RθJL): 22 oC/W • Capacitance at VR= 10 V: 40 pF • Solder temperature: 260 oC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper except for JANS with solid Silver (Ag) and no finish • MARKING: Body painted and part number, etc. • POLARITY: Cathode indicated by band • Tape & Reel option: Standard per EIA-296 • Weight: 750 mg • See package dimensions on last page Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright 2004 11-01-2004 REV A |
Аналогичный номер детали - 1N6627 |
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Аналогичное описание - 1N6627 |
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