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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TDA5145T датащи(PDF) 7 Page - NXP Semiconductors |
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TDA5145T датащи(HTML) 7 Page - NXP Semiconductors |
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7 / 24 page  June 1994 7 Philips Semiconductors Product specification Brushless DC motor drive circuit TDA5145 MOT0; centre tap VI input voltage −0.5 − VVMOT V II input bias current 0.5 V < VI < VVMOT − 1.5 V −10 −−µA VCSW comparator switching level note 3 ±20 ±25 ±30 mV ∆V CSW variation in comparator switching levels −− 3mV Vhys comparator input hysteresis − 75 −µV MOT1, MOT2 and MOT3; see Fig.5 VDO drop-out output voltage IO = 100 mA − 0.9 1.05 V IO = 1000 mA − 1.6 1.85 V ∆V OL variation in saturation voltage between lower transistors IO = 100 mA −− 180 mV ∆V OH variation in saturation voltage between upper transistors IO = −100 mA −− 180 mV ILIM current limiting VVMOT = 10 V; RO = 1.2 Ω 1.8 2.0 2.5 A tr rise time switching output VVMOT = 15 V; see Fig.6 5 10 15 µs tf fall time switching output VVMOT = 15 V; see Fig.6 10 15 20 µs VDHF diode forward voltage (diode DH)IO = −500 mA; notes 4 and 5; see Fig.1 −− 1.5 V VDLF diode forward voltage (diode DL)IO = 500 mA; notes 4 and 5; see Fig.1 −1.5 −− V IDM peak diode current note 5 −− 2.5 A +AMP IN and −AMP IN VI input voltage −0.3 − VP − 1.7 V differential mode voltage without ‘latch-up’ −− ±V P V Ib input bias current −− 650 nA CI input capacitance − 4 − pF Voffset input offset voltage −− 10 mV AMP OUT (open collector) Isink output sink current 40 −− mA Vsat saturation voltage II =40mA − 1.5 2.1 V VO output voltage −0.5 − +18 V SR slew rate RL = 330 Ω; CL =50pF − 60 − mA/ µs Gtr transfer gain 0.3 −− S DIR VIH HIGH level input voltage 4 V < VP < 18 V 2.0 −− V VIL LOW level input voltage 4 V < VP <18V −− 0.8 V IIL LOW level input current −−20 −µA IIH HIGH level input current − 20 −µA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
Аналогичный номер детали - TDA5145T |
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Аналогичное описание - TDA5145T |
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