Subject to change without notice.

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FEATURES

XBright LED Technology

Larger “Power Chip” Design

High Performance

35 mW min. (460 nm) Blue

30 mW min. (470 nm) Blue

20 mW min. (505 nm) Traffic Green

15 mW min. (527 nm) Green

Single Wire Bond Structure

AuSn Backside Metal

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APPLICATIONS

General Illumination

Automobile

Aircraft

Decorative Lighting

Task Lighting

Outdoor Illumination

White LEDs

Crosswalk Signals

Backlighting

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CxxxXB500-Sxx00-A

Cree’s XB™ power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient

InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity

LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and

require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor

full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical

power packages that employ proper thermal management.

CxxxXB500-Sxx00-A Chip Diagram

Top View

Bottom View

G•SiC LED Chip

500 x 500 μm

SiC Substrate

376 μm

Contact Metal

h = 250 μm

Bond Pad

120 μm Diameter

Die Cross Section

Cathode (-)

InGaN

Anode (+)