September 1983

5

Philips Semiconductors

Product specification

FM radio circuit

TDA7010T

A.C. CHARACTERISTICS

e.m.f.) modulated with

∆f = ±22,5 kHz; f

noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified.

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Sensitivity (see Fig.3)

(e.m.f. voltage)

for

−3 dB limiting;

muting disabled

EMF

−

1,5

−µV

for

−3 dB muting

EMF

−

6

−µV

for S/N = 26 dB

EMF

−

5,5

−µV

Signal handling (e.m.f. voltage)

for THD < 10%;

∆f = ± 75 kHz

EMF

−

200

−

mV

Signal-to-noise ratio

S/N

−

60

−

dB

Total harmonic distortion

at

∆f = ± 22,5 kHz

THD

−

0,7

−

%

at

∆f = ± 75 kHz

THD

−

2,3

−

%

AM suppression of output voltage

(ratio of the AM output signal

referred to the FM output signal)

AMS

−

50

−

dB

Ripple rejection (

∆V

RR

−

10

−

dB

Oscillator voltage (r.m.s. value) at pin 5

−

250

−

mV

Variation of oscillator frequency

with supply voltage (

∆V

∆f

osc

−

60

−

kHz/V

Selectivity

−

43

−

dB

−

28

−

dB

A.F.C. range

∆f

rf

−± 300

−

kHz

Audio bandwidth at

∆V

measured with pre-emphasis (t = 50

µs)

B

−

10

−

kHz

A.F. output voltage (r.m.s. value)

−

75

−

mV

Load resistance

−−

22

k

Ω

−−

47

k

Ω