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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TS615IPWT датащи(PDF) 6 Page - STMicroelectronics |
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TS615IPWT датащи(HTML) 6 Page - STMicroelectronics |
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6 / 36 page  TS615 Electrical Characteristics 6/36 Table 4. V CC = ±2.5V, Rfb=910 Ω,T amb = 25°C (unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit DC performance Vio Input Offset Voltage Tamb 0.5 2.5 mV Tmin. < Tamb < Tmax. 1.2 ∆V io Differential Input Offset Voltage Tamb = 25°C 2.5 mV Iib+ Positive Input Bias Current Tamb 530 µA Tmin. < Tamb < Tmax. 8 Iib- Negative Input Bias Current Tamb 0.8 11 µA Tmin. < Tamb < Tmax. 1.24 ZIN+ Input(+) Impedance 71 k Ω ZIN- Input(-) Impedance 62 Ω CIN+ Input(+) Capacitance 1.5 pF CMR Common Mode Rejection Ratio 20 log ( ∆Vic/∆Vio) ∆V ic = ±1V 55 60 dB Tmin. < Tamb. < Tmax. 58 SVR Supply Voltage Rejection Ratio 20 log ( ∆V cc/∆Vio) ∆V cc=±2V to ±2.5V 63 77 dB Tmin. < Tamb. < Tmax. 76 ICC Total Supply Current per Operator No load 11.9 15 mA Dynamic performance and output characteristics ROL Open Loop Transimpedance Vout = 2Vp-p, RL = 10Ω 25.4 M Ω Tmin. < Tamb. < Tmax. 2.1 BW -3dB Bandwidth Small Signal Vout<20mVp AV = 12dB, RL = 10Ω 20 30 MHz Full Power Bandwidth Large Signal Vout = 1.4Vp AV = 12dB, RL = 10Ω 20 Gain Flatness @ 0.1dB Small Signal Vout<20mVp AV = 12dB, RL = 10Ω 5.7 MHz Tr Rise Time Vout = 2.8Vp-p, AV = 12dB RL = 10Ω 11 ns Tf Fall Time Vout = 2.8Vp-p, AV = 12dB RL = 10Ω 11.5 ns Ts Settling Time Vout = 2.2Vp-p, AV = 12dB RL = 10Ω 39 ns SR Slew Rate Vout = 2.2Vp-p, AV = 12dB RL = 10Ω 100 130 V/ µs VOH High Level Output Voltage RL=10Ω Connected to GND 1.5 1.75 V VOL Low Level Output Voltage RL=10Ω Connected to GND -2.05 -1.8 V Iout Output Sink Current Vout = -1.25Vp -350 -470 mA Tmin. < Tamb < Tmax. -450 Output Source Current Vout = +1.25Vp 200 270 Tmin. < Tamb < Tmax. 245 |
Аналогичный номер детали - TS615IPWT |
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Аналогичное описание - TS615IPWT |
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