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TC551802EZBTR датащи(PDF) 10 Page - Microchip Technology

номер детали TC551802EZBTR
подробное описание детали  1 關A Low Dropout Positive Voltage Regulator
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
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TC55
DS21435F-page 10
© 2005 Microchip Technology Inc.
5.0
THERMAL CONSIDERATIONS
5.1
Power Dissipation
The amount of power dissipated internal to the low
dropout linear regulator is the sum of the power dissi-
pation within the linear pass device (P-Channel MOS-
FET) and the quiescent current required to bias the
internal reference and error amplifier. The internal lin-
ear pass device power dissipation is calculated by mul-
tiplying the voltage across the linear device by the
current through the device.
EQUATION
The internal power dissipation, as a result of the bias
current for the LDO internal reference and error
amplifier, is calculated by multiplying the ground or
quiescent current by the input voltage.
EQUATION
The total internal power dissipation is the sum of PD
(Pass Device) and PD (Bias).
EQUATION
For the TC55, the internal quiescent bias current is so
low (1 µA typical) that the PD (Bias) term of the power
dissipation equation can be ignored. The maximum
power dissipation can be estimated by using the
maximum input voltage and the minimum output
voltage to obtain a maximum voltage differential
between input and output. The next step would be to
multiply the maximum voltage differential by the
maximum output current.
EQUATION
Given:
VIN
= 3.3V to 4.1V
VOUT = 3.0 V ± 2%
IOUT = 1 mA to 100 mA
TAMAX = 55°C
PMAX = (4.1V – (3.0V x 0.98)) x 100 mA
PMAX = 116.0 milliwatts
To determine the junction temperature of the device, the
thermal resistance from junction-to-ambient must be
known. The 3-pin SOT-23 thermal resistance from junc-
tion-to-air (RθJA) is estimated to be approximately
359°C/W. The SOT-89 RθJA is estimated to be approxi-
mately 110°C/W when mounted on 1 square inch of
copper. The TO-92 RθJA is estimated to be 131.9°C/W.
The RθJA will vary with physical layout, airflow and other
application-specific conditions.
The device junction temperature is determined by
calculating
the
junction
temperature
rise
above
ambient, then adding the rise to the ambient
temperature.
EQUATION
PD (Pass Device) = (VIN – VOUT) x IOUT
PD (Bias) = VIN x IGND
PTOTAL = PD (Pass Device) + PD (Bias)
PD = (VINMAX – VOUTMIN) x IOUTMAX
Junction Temperature
TJ = PDMAX x RθJA + TA
TJ = 116.0 milliwatts x 359°C/W + 55°C
TJ = 96.6°C
SOT-23 Example:
SOT-89 Example:
TJ = 116.0 milliwatts x 110°C/W + 55°C
TJ = 67.8°C
TO-92 Example:
TJ = 116.0 milliwatts x 131.9°C/W + 55°C
TJ = 70.3°C


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