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IRF840 датащи(PDF) 3 Page - STMicroelectronics |
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IRF840 датащи(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 IRF840 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 250 V, ID = 3.5 A RG =4.7Ω VGS = 10 V (see test circuit, Figure 3) 10 21 ns ns Qg Total Gate Charge VDD = 400V, ID = 7 A, VGS = 10V 29.6 39 nC Qgs Gate-Source Charge 4.9 nC Qgd Gate-Drain Charge 13.9 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 7 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 9ns tf Fall Time 9 ns tc Cross-over Time 19 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 8 A ISDM (2) Source-drain Current (pulsed) 32 A VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 7 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 384 ns Qrr Reverse Recovery Charge 2.2 µC IRRM Reverse Recovery Current 11.8 A Safe Operating Area Thermal Impedence |
Аналогичный номер детали - IRF840_02 |
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Аналогичное описание - IRF840_02 |
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