поискавой системы для электроныых деталей |
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CDCE949PWR датащи(PDF) 4 Page - Texas Instruments |
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CDCE949PWR датащи(HTML) 4 Page - Texas Instruments |
4 / 31 page www.ti.com THERMAL RESISTANCE FOR TSSOP (PW) PACKAGE (1) RECOMMENDED OPERATING CONDITIONS RECOMMENDED CRYSTAL/VCXO SPECIFICATIONS (1) EEPROM SPECIFICATION CDCE949 CDCEL949 SCAS844 – JUNE 2007 AIRFLOW TSSOP24 PARAMETER (lfm) °C/W 0 85 150 80 TJA Thermal Resistance Junction to Ambient 250 78 500 76 TJC Thermal Resistance Junction to Case — 26 (1) The package thermal impedance is calculated in accordance with JESD 51 and JEDEC2S2P (high-k board). MIN NOM MAX UNIT VDD Device supply voltage 1.7 1.8 1.9 V CDCE949 2.3 3.6 Output Yx supply VDD(OUT) V voltage CDCEL949 1.7 1.9 VIL Low level input voltage LVCMOS 0.3 × V DD V VIH High level input voltage LVCMOS 0.7 × V DD V VI(thresh) Input voltage threshold LVCMOS 0.5 × V DD V Input voltage range S0 0 1.9 VIS V Input voltage range S1, VIthresh = 0.5 VDD 0 3.6 S2, SDA, SCL VICLK Input voltage range CLK 0 1.9 V VDDout = 3.3 V ±12 mA IOH /IOL Output current VDDout = 2.5 V ±10 mA VDDout = 1.8 V ±8 mA CL Output load LVCMOS 10 pF TA Operating free-air temperature –40 85 °C MIN NOM MAX UNIT fXtal Crystal Input frequency range (fundamental mode) 8 27 32 MHz ESR Effective series resistance 100 Ω fPR Pulling range (0 V ≤ V Ctrl ≤ 1.8 V) (2) ±120 ±150 ppm V(Ctrl) Frequency control voltage 0 VDD V C0/C1 Pullability ratio 220 CL On-chip load capacitance at Xin and Xout 0 20 pF (1) For more information about VCXO configuration and crystal recommendation see application report SCAA085. (2) Pulling range depends on crystal type, on-chip crystal load capacitance and PCB stray capacitance; pulling range of min ±120 ppm applies for crystal listed in the application report SCAA085. MIN TYP MAX UNIT EEcyc EEcyc programming cycles of EEPROM 1000 cycles EEret EEret data retention 10 years 4 Submit Documentation Feedback |
Аналогичный номер детали - CDCE949PWR |
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Аналогичное описание - CDCE949PWR |
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