GJ78MXX

Page: 5/5

ISSUED DATE :2004/12/15

REVISED DATE :2005/12/13B

: Io=350mA, Vin=33V, Cin=0.33 F, Co=0.1 F unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

23.04

24.0

24.96

I

o=350mA

VO

22.80

-

25.20

V

27V Vin 33V , 5mA Io 350mA

-

10

100

27V Vin 33V, Io=200mA

VO

(Line Regulation)

-

5

50

mV

28V Vin 33V, Io=200mA

-

30

480

5mA Io 500mA

VO

(Load Regulation)

-

15

240

mV

5mA Io 200mA

I

Q

-

4.8

6.0

mA

I

o=0mA

-

-

0.5

5mA Io 350mA

I

Q

-

-

0.8

mA

27V Vin 33V, Io=200mA

Vn

-

170

-

V

10Hz f 100KHz

RR

50

-

-

dB

VD

-

2.0

-

V

I

o=500mA

I

sc

-

170

-

mA

Vin=30V

I

pk

-

700

-

mA

Tj=25 :

Vo / Tj

-

-0.7

-

mV/ :

I

o=5mA, 0 : Tj 125 :

Typical Application

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.

GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165