74LVC1G34GV datasheet(7/15 Pages) NXP

номер детали	74LVC1G34GV

подробное описание детали	Single buffer

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74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

7 of 15

NXP Semiconductors

74LVC1G34

Single buffer

11. Dynamic characteristics

[1]

Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V, and 5.0 V respectively.

[2]

tpd is the same as tPLH and tPHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

∑(C

L × VCC

2

× f

o) = sum of outputs.

12. Waveforms

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

tpd

propagation delay

A to Y; see Figure 7

[2]

VCC = 1.65 V to 1.95 V

1.0

4.0

8.6

1.0

11.0

ns

VCC = 2.3 V to 2.7 V

0.5

2.6

4.4

0.5

5.6

ns

VCC = 2.7 V

0.5

2.3

4.5

0.5

5.6

ns

VCC = 3.0 V to 3.6 V

0.5

2.0

4.1

0.5

5.2

ns

VCC = 4.5 V to 5.5 V

0.5

1.6

3.2

0.5

4.1

ns

CPD

power dissipation

capacitance

VI = GND to VCC; VCC = 3.3 V

[3]

-15-

-

pF

Measurement points are given in Table 9.

VOL and VOH are typical output voltage drops that occur with the output load.

Fig 7.

The data input (A) to output (Y) propagation delays

mnb153

tPHL

tPLH

VM

A input

Y output

GND

VI

VOH

VOL

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