2SD1658

2004-07-26

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)

2SD1658

Micro Motor Drive, Hammer Drive Applications

Switching Applications

Power Amplifier Applications

• Zener diode included between collector and base

Characteristics

Symbol

Rating

Unit

Collector-base voltage

60 ± 10

V

Collector-emitter voltage

60 ± 10

V

Emitter-base voltage

8

V

Collector current

2

A

Base current

0.5

A

Ta = 25°C

1.5

Collector power

dissipation

Tc = 25°C

10

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8H1A

Weight: 0.82 g (typ.)

BASE

EMITTER

≈ 4 kΩ

≈ 800 Ω

COLLECTOR