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2SK3095LS датащи(PDF) 1 Page - Sanyo Semicon Device |
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2SK3095LS датащи(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page 2SK3095LS No.8624-1/3 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : EN8624 N0806QB SY IM TC-00000313 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET 2SK3095LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-Speed Switching Applications. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 5A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation PD 2.0 W Tc=25 °C25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 71.4 mJ Avalanche Current *2 IAV 5A *1 VDD=50V, L=5mH, IAV=5A *2 L ≤5mH, single pulse Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 400 V Zero-Gate Voltage Drain Current IDSS VDS=320V, VGS=0V 1.0 mA Gate-to-Source Leakage Current IGSS VGS= ±30V, VDS=0V ±100 nA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.0 4.0 V Forward Transfer Admittance yfs VDS=10V, ID=2.8A 1.4 2.8 S Static Drain-to-Source On-State Resistance RDS(on) ID=2.8A, VGS=15V 0.92 1.2 Ω Marking : K3095 Continued on next page. |
Аналогичный номер детали - 2SK3095LS |
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Аналогичное описание - 2SK3095LS |
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