STF12NM50N datasheet(3/18 Pages) STMICROELECTRONICS

номер детали	STF12NM50N

подробное описание детали	N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET

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3 / 18 page

STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N

Electrical ratings

3/18

1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220-D/D²PAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25°C

11

11(1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC=100°C

6.7

6.7(1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

44

44 (1)

A

PTOT

Total dissipation at TC = 25°C

100

25

W

Derating factor

0.8

0.2

W/°C

dv/dt(3)

3.

ISD ≤11A, di/dt ≤400A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1s;TC=25°C)

--

2500

V

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

D²PAK

DPAK

TO-220FP

Rthj-case

Thermal resistance junction-case max

1.25

5

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

100

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

5A

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Ias, Vdd=50V)

350

mJ

Аналогичный номер детали - STF12NM50N

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STF12NM50N	588Kb / 19P	N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP
STMicroelectronics	STF12NM50ND	1Mb / 16P	N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
Inchange Semiconductor ...	STF12NM50ND	310Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STF12NM50ND	1Mb / 8P	Power MOSFET

More results

Аналогичное описание - STF12NM50N

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB13NM50N	622Kb / 17P	N-channel 500V - 0.250廓 - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh??Power MOSFET
	STB25NM50N	514Kb / 18P	N-channel 500V - 0.11廓 - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
	STD9NM50N	491Kb / 17P	N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
	STD7NM50N	421Kb / 17P	N-channel 500V - 0.70廓 - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
	STD11NM60N-1	489Kb / 18P	N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET
	STP25NM60N	523Kb / 18P	N-channel 600V - 0.140廓 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
	STP21NM50N	463Kb / 18P	N-channel 500V - 0.15廓 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh??Power MOSFET
	STP11NM80	582Kb / 14P	N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET
	STB23NM60N	554Kb / 19P	N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET
	STB21NM50N	633Kb / 16P	N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

More results

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Аналогичный номер детали - STF12NM50N

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