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BD239A датащи(PDF) 1 Page - Power Innovations Ltd

номер детали BD239A
подробное описание детали  NPN SILICON POWER TRANSISTORS
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производитель  POINN [Power Innovations Ltd]
домашняя страница  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BD239A датащи(HTML) 1 Page - Power Innovations Ltd

  BD239A Datasheet HTML 1Page - Power Innovations Ltd BD239A Datasheet HTML 2Page - Power Innovations Ltd BD239A Datasheet HTML 3Page - Power Innovations Ltd BD239A Datasheet HTML 4Page - Power Innovations Ltd BD239A Datasheet HTML 5Page - Power Innovations Ltd BD239A Datasheet HTML 6Page - Power Innovations Ltd  
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BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
PRODUCT
INFORMATION
1
JUNE 1973 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with the
BD240 Series
q
30 W at 25°C Case Temperature
q
2 A Continuous Collector Current
q
4 A Peak Collector Current
q
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD239
BD239A
BD239B
BD239C
VCER
55
70
90
115
V
Collector-emitter voltage (IC = 30 mA)
BD239
BD239A
BD239B
BD239C
VCEO
45
60
80
100
V
Emitter-base voltage
VEBO
5
V
Continuous collector current
IC
2
A
Peak collector current (see Note 1)
ICM
4
A
Continuous base current
IB
0.6
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
30
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2
W
Unclamped inductive load energy (see Note 4)
½LIC2
32
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
250
°C


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