BD249B datasheet(3/6 Pages) POINN

номер детали	BD249B

подробное описание детали	NPN SILICON POWER TRANSISTORS

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3

JUNE 1973 - REVISED MARCH 1997

BD249, BD249A, BD249B, BD249C

NPN SILICON POWER TRANSISTORS

PRODUCT

INFORMATION

TYPICAL CHARACTERISTICS

Figure 1.

Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C - Collector Current - A

0·1

1·0

10

100

1

10

100

1000

TCS635AD

V

CE = 4 V

T

C = 25°C

t

p = 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

I

B - Base Current - A

0·001

0·01

0·1

1·0

10

100

0·01

0·1

1·0

10

TCS635AB

I

C = 25 A

I

C = 20 A

I

C = 15 A

I

C = 10 A

I

C = 300 mA

I

C =

1 A

I

C =

3 A

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

I

C - Collector Current - A

0·1

1·0

10

100

0·6

0·8

1·0

1·2

1·4

1·6

1·8

2·0

TCS635AC

V

CE = 4 V

T

C = 25°C

Аналогичный номер детали - BD249B

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	BD249B	131Kb / 3P	POWER TRANSISTORS(25A,125W)
Bourns Electronic Solut...	BD249B	109Kb / 5P	NPN SILICON POWER TRANSISTORS
Savantic, Inc.	BD249B	145Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	BD249B	134Kb / 3P	Silicon NPN Power Transistors
Bourns Electronic Solut...	BD249B	114Kb / 4P	NPN SILICON POWER TRANSISTORS

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Аналогичное описание - BD249B

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Motorola, Inc	MJ8504	416Kb / 6P	NPN SILICON POWER TRANSISTORS
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Boca Semiconductor Corp...	2N6676	144Kb / 3P	NPN SILICON POWER TRANSISTORS
ON Semiconductor	TIP47	199Kb / 6P	POWER TRANSISTORS NPN SILICON 1995 REV 1
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