поискавой системы для электроныых деталей |
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TIP102 датащи(PDF) 2 Page - Power Innovations Ltd |
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TIP102 датащи(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS 2 AUGUST 1978 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA (see Note 5) IB = 0 TIP100 TIP101 TIP102 60 80 100 V ICEO Collector-emitter cut-off current VCE = 30 V VCE = 40 V VCE = 50 V IB = 0 IB = 0 IB = 0 TIP100 TIP101 TIP102 50 50 50 µA ICBO Collector cut-off current VCB = 60 V VCB = 80 V VCB = 100 V IE = 0 IE = 0 IE = 0 TIP100 TIP101 TIP102 50 50 50 µA IEBO Emitter cut-off current VEB = 5 V IC = 0 8 mA hFE Forward current transfer ratio VCE = 4 V VCE = 4 V IC = 3 A IC = 8 A (see Notes 5 and 6) 1000 200 20000 VCE(sat) Collector-emitter saturation voltage IB = 6 mA IB = 80 mA IC = 3 A IC = 8 A (see Notes 5 and 6) 2 2.5 V VBE Base-emitter voltage VCE = 4 V IC = 8 A (see Notes 5 and 6) 2.8 V VEC Parallel diode forward voltage IE = 8 A IB = 0 (see Notes 5 and 6) 3.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W CθC Thermal capacitance of case 0.9 J/°C resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT td Delay time IC = 8 A VBE(off) = -5 V IB(on) = 80 mA RL = 5 Ω IB(off) = -80 mA tp = 20 µs, dc ≤ 2% 35 ns tr Rise time 350 ns ts Storage time 1.8 µs tf Fall time 2.45 µs |
Аналогичный номер детали - TIP102 |
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Аналогичное описание - TIP102 |
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