IRLR014NPBF datasheet(4/11 Pages) IRF

номер детали	IRLR014NPBF

подробное описание детали	HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14廓 , ID = 10A )

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производитель	IRF [International Rectifier]

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IRLR/U014NPbF

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

1

10

100

0.2

0.6

1.0

1.4

1.8

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

0.1

1

10

100

1000

1

10

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 175 C

= 25 C

°

J

C

V

, Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

0

2

4

6

8

10

0

5

10

15

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

6 A

V

= 27V

DS

V

= 44V

DS

1

10

100

0

100

200

300

400

500

V

, Drain-to-Source Voltage (V)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C

SHORTED

GS

iss

gs

gd ,

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

Аналогичный номер детали - IRLR014NPBF

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRLR014NPBF	293Kb / 10P	Logic-Level Gate Drive

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Аналогичное описание - IRLR014NPBF

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	IRF740SPBF	943Kb / 8P	HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=0.55廓 , ID=10A )
	IRFR5305PBF	248Kb / 11P	HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A )
	IRF1405ZS-7PPBF	696Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )
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	IRFZ46N	190Kb / 9P	HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)
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Аналогичный номер детали - IRLR014NPBF

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