BC559 datasheet(1/2 Pages) DIOTEC

номер детали	BC559

подробное описание детали	General Purpose Si-Epitaxial PlanarTransistors

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производитель	DIOTEC [Diotec Semiconductor]

домашняя страница	http://www.diotec.com

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BC556 ... BC559

PNP

General Purpose Si-Epitaxial PlanarTransistors

Si-Epitaxial Planar-Transistoren für universellen Einsatz

PNP

Version 2006-05-31

Dimensions - Maße [mm]

Power dissipation – Verlustleistung

500 mW

Plastic case

Kunststoffgehäuse

TO-92

(10D3)

Weight approx. – Gewicht ca.

0.18 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

BC556

BC557

BC558/559

Collector-Emitter-voltage

E-B short

- VCES

80 V

50 V

30 V

Collector-Emitter-voltage

B open

- VCEO

65 V

45 V

30 V

Collector-Base-voltage

E open

- VCBO

80 V

50 V

30 V

Emitter-Base-voltage

C open

- VEB0

5 V

Power dissipation – Verlustleistung

Ptot

500 mW 1)

Collector current – Kollektorstrom (dc)

- IC

100 mA

Peak Collector current – Kollektor-Spitzenstrom

- ICM

200 mA

Peak Base current – Basis-Spitzenstrom

- IBM

200 mA

Peak Emitter current – Emitter-Spitzenstrom

IEM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Group A

Group B

Group C

DC current gain – Kollektor-Basis-Stromverhältnis 2)

- VCE = 5 V, - IC = 10 µA

hFE

typ. 90

typ. 150

typ. 270

- VCE = 5 V, - IC = 2 mA

hFE

110 ... 220

200 ... 450

420 ... 800

- VCE = 5 V, - IC = 100 mA

hFE

typ. 120

typ. 200

typ. 400

h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz

Small signal current gain

Kleinsignal-Stromverstärkung

hfe

typ. 220

typ. 330

typ. 600

Input impedance – Eingangs-Impedanz

hie

1.6 ... 4.5 kΩ

3.2 ...8.5 kΩ

6 ... 15 kΩ

Output admittance – Ausgangs-Leitwert

hoe

18 < 30 µS

30 < 60 µS

60 < 110 µS

Reverse voltage transfer ratio

Spannungsrückwirkung

hre

typ. 1.5*10-4

typ. 2*10-4

typ. 3*10-4

1

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

http://www.diotec.com/

1

2 x 2.54

C BE

Аналогичный номер детали - BC559

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BC559	107Kb / 4P	Low Noise Transistors
KEC(Korea Electronics)	BC559	34Kb / 1P	EPITAXIAL PLANAR PNP TRANSISTOR
NXP Semiconductors	BC559	44Kb / 8P	PNP general purpose transistor 1999 May 28
Fairchild Semiconductor	BC559	151Kb / 4P	PNP Epitaxial Silicon Transistor
Semtech Corporation	BC559	370Kb / 5P	PNP Silicon Epitaxial Planar Transistor for switching and AF applications???

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Аналогичное описание - BC559

производитель	номер детали	датащи	подробное описание детали
Diotec Semiconductor	MPSA55	107Kb / 2P	General Purpose Si-Epitaxial PlanarTransistors
	BC556XBK	87Kb / 2P	General Purpose Si-Epitaxial PlanarTransistors
	MMBTA55	107Kb / 2P	General Purpose Si-Epitaxial PlanarTransistors
	MPSA05	107Kb / 2P	General Purpose Si-Epitaxial PlanarTransistors
	BC546	148Kb / 2P	Si-Epitaxial PlanarTransistors
	BC556	144Kb / 2P	Si-Epitaxial PlanarTransistors
	2N3903	98Kb / 2P	Si-Epitaxial PlanarTransistors
	TIP125A	49Kb / 2P	Si-Epitaxial PlanarTransistors
	2N4402	97Kb / 2P	Si-Epitaxial PlanarTransistors
	BC327	143Kb / 2P	Si-Epitaxial PlanarTransistors

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