поискавой системы для электроныых деталей |
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IRF9910PBF датащи(PDF) 1 Page - International Rectifier |
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IRF9910PBF датащи(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 8/11/04 IRF9910PbF HEXFET® Power MOSFET Notes through
are on page 10 SO-8 PD - 95728 Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.3 9.9 A IDM Pulsed Drain Current c 83 98 PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 °C/W RθJA Junction-to-Ambient fg ––– 62.5 ± 20 20 -55 to + 150 2.0 0.016 1.3 S1 G1 4 3 S2 1 G2 2 D1 D1 5 6 D2 8 D2 7 VDSS ID 20V Q1 13.4m :@V GS = 10V 10A Q2 9.3m :@V GS = 10V 12A RDS(on) max |
Аналогичный номер детали - IRF9910PBF |
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Аналогичное описание - IRF9910PBF |
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