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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF1405ZS-7PPBF датащи(PDF) 2 Page - International Rectifier |
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IRF1405ZS-7PPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRF1405ZS/L-7PPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ of approximately 90°C. Solder mounted on IMS substrate. S D G S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage55 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C RDS(on) SMD Static Drain-to-Source On-Resistance ––– 3.7 4.9 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 150 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 150 230 nC Qgs Gate-to-Source Charge ––– 37 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 64 ––– td(on) Turn-On Delay Time ––– 16 ––– ns tr Rise Time ––– 140 ––– td(off) Turn-Off Delay Time ––– 170 ––– tf Fall Time ––– 130 ––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 5360 ––– pF Coss Output Capacitance ––– 1310 ––– Crss Reverse Transfer Capacitance ––– 340 ––– Coss Output Capacitance ––– 6080 ––– Coss Output Capacitance ––– 920 ––– Coss eff. Effective Output Capacitance ––– 1700 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 150 (Body Diode) A ISM Pulsed Source Current ––– ––– 590 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 6395ns Qrr Reverse Recovery Charge ––– 160 240 nC RG = 5.0Ω ID = 88A VDS = 25V, ID = 88A VDD = 28V ID = 88A VGS = 20V VGS = -20V VDS = 44V VGS = 10V e VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 10V d MOSFET symbol VGS = 0V VDS = 25V VGS = 0V, VDS = 44V, ƒ = 1.0MHz Conditions VGS = 0V, VDS = 0V to 44V ƒ = 1.0MHz, See Fig. 5 TJ = 25°C, IF = 88A, VDD = 28V di/dt = 100A/µs e TJ = 25°C, IS = 88A, VGS = 0V e showing the integral reverse p-n junction diode. VDS = VGS, ID = 150µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 88A e |
Аналогичный номер детали - IRF1405ZS-7PPBF |
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Аналогичное описание - IRF1405ZS-7PPBF |
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