поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

AM29LV008B датащи(PDF) 2 Page - Advanced Micro Devices

номер детали AM29LV008B
подробное описание детали  8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
Download  39 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV008B датащи(HTML) 2 Page - Advanced Micro Devices

  AM29LV008B Datasheet HTML 1Page - Advanced Micro Devices AM29LV008B Datasheet HTML 2Page - Advanced Micro Devices AM29LV008B Datasheet HTML 3Page - Advanced Micro Devices AM29LV008B Datasheet HTML 4Page - Advanced Micro Devices AM29LV008B Datasheet HTML 5Page - Advanced Micro Devices AM29LV008B Datasheet HTML 6Page - Advanced Micro Devices AM29LV008B Datasheet HTML 7Page - Advanced Micro Devices AM29LV008B Datasheet HTML 8Page - Advanced Micro Devices AM29LV008B Datasheet HTML 9Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 39 page
background image
2
Am29LV008T/Am29LV008B
PRELIMINARY
90 ns access time, optimizing performance in systems
where the power supply is in the regulated range of 3.0
to 3.6 volts. To eliminate bus contention, the device has
separate chip enable (CE), write enable (WE), and
output enable (OE) controls.
The Am29LV008 is entirely command set-compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write cy-
cles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
The Am29LV008 is programmed by executing the pro-
gram command sequence. This invokes the Embedded
Program Algorithm, which is an internal algorithm that
automatically times the program pulse widths and veri-
fies proper cell margin. The device is erased by execut-
ing the erase command sequence. This invokes the
Embedded Erase Algorithm, which is an internal algo-
rithm that automatically preprograms the array, if it is
not already programmed, before executing the erase
operation. During erase, the device automatically times
the erase pulse widths and verifies proper cell margin.
This device also features a sector erase architecture.
This allows for sectors of memory to be erased and re-
programmed without affecting the data contents of
other sectors. A sector is typically erased and verified
within 1.0 second. The Am29LV008 is fully erased
when shipped from the factory.
The Am29LV008 device also features hardware sector
protection, implemented via external programming
equipment, which disables both program and erase op-
erations in any combination of the memory sectors.
The Erase Suspend feature enables the user to pause
the erase operation, for any period of time, to read data
from or program data to a sector that was not being
erased. Thus, true background erase can be achieved.
The device features 3.0 volt, single-power-supply oper-
ation for both read and write functions. Internally gen-
erated and regulated voltages are provided for the
program and erase operations. A low VCC detector au-
tomatically inhibits write operations during power tran-
sitions. The end of program or erase is detected by the
RY/BY pin. Data Polling of DQ7, or by the Toggle Bit
(DQ6). Once the end of a program or erase cycle has
been completed, the device automatically resets to the
read mode.
The Am29LV008 also has a hardware RESET pin.
When this pin is driven low, execution of any Embed-
ded Program or Erase Algorithm will be terminated.
The internal state machine is then be reset into the
read mode. Resetting the device will enable the sys-
tem’s microprocessor to read the boot-up firmware
from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The Am29LV008 memory electrically erases
all bits within a sector simultaneously via Fowler-
Nordheim tunneling. The bytes are programmed one
byte at a time using the EPROM programming mecha-
nism of hot electron injection.


Аналогичный номер детали - AM29LV008B

производительномер деталидатащиподробное описание детали
logo
Advanced Micro Devices
AM29LV008B AMD-AM29LV008B Datasheet
492Kb / 38P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008B AMD-AM29LV008B Datasheet
716Kb / 41P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-120EC AMD-AM29LV008BB-120EC Datasheet
492Kb / 38P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-120EC AMD-AM29LV008BB-120EC Datasheet
716Kb / 41P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-120ECB AMD-AM29LV008BB-120ECB Datasheet
492Kb / 38P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
More results

Аналогичное описание - AM29LV008B

производительномер деталидатащиподробное описание детали
logo
Advanced Micro Devices
AM29LV800T AMD-AM29LV800T Datasheet
207Kb / 48P
   8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
AM29F800T AMD-AM29F800T Datasheet
250Kb / 41P
   8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29LV008B AMD-AM29LV008B Datasheet
492Kb / 38P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV081 AMD-AM29LV081 Datasheet
439Kb / 35P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV008B AMD-AM29LV008B_06 Datasheet
716Kb / 41P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV081B AMD-AM29LV081B_06 Datasheet
952Kb / 40P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
logo
Eon Silicon Solution In...
EN29LV800B EON-EN29LV800B Datasheet
351Kb / 41P
   8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800C EON-EN29LV800C_11 Datasheet
407Kb / 41P
   8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800 EON-EN29LV800 Datasheet
239Kb / 43P
   8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
logo
Advanced Micro Devices
AM29LV081B AMD-AM29LV081B Datasheet
39Kb / 6P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com