SD103AWS-G - SD103CWS-G
SCHOTTKY BARRIER SWITCHING DIODE
·
Low Forward Voltage Drop
·
Guard Ring Construction for
Transient Protection
·
Negligible Reverse Recovery Time
·
Low Reverse Capacitance
·
Ultra-Small Surface Mount Package
·
Case: SOD-323, Plastic
·
Polarity: Cathode Band
·
Leads: Solderable per MIL-STD-202,
Method 208
·
SD103AWS-G Marking: S4
·
SD103BWS-G Marking: S5 or S4
·
SD103CWS-G Marking: S6 or S5 or S4
·
Weight: 0.004 grams (approx.)
Mechanical Data
Maximum Ratings @ TA = 25°C unless otherwise specified
Notes:
1. Valid provided that leads are kept at ambient temperature.
2. Test period <3000ms.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
30
20
V
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current (Note 1)
IFM
350
mA
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
IFSM
1.5
A
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
RqJA
625
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +125
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
SD103AWS-G
SD103BWS-G
SD103CWS-G
V(BR)R
40
30
20
¾¾
V
IR = 10mA
IR = 10mA
IR = 10mA
Forward Voltage Drop
VFM
¾¾
0.37
0.60
V
IF = 20mA
IF = 200mA
Peak Reverse Current
SD103AWS-G
SD103BWS-G
SD103CWS-G
IRM
¾¾
5.0
mA
VR = 30V
VR = 20V
VR = 10V
Junction Capacitance
Cj
¾
50
¾
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
trr
¾
10
¾
ns
IF = IR = 200mA,
Irr = 0.1 x IR,RL = 100W
A B
C
D
E
G
H
J
SENSITRON
SEMICONDUCTOR
Data Sheet 3331, Rev. -
SOD-323
Dim
Min
Max
Min
Max
A
2.30
2.70 0.091 0.106
B
1.75
1.95 0.069 0.077
C
1.15
1.35 0.045 0.053
D
0.25
0.35 0.010 0.014
E
0.05
0.15 0.002 0.006
G
0.70
0.95 0.028 0.037
H
0.30
—
0.012
—
In mm
In inch
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Characteristic
Symbol
SD103AWS-G
SD103BWS-G
SD103CWS-G
Unit
Green Products
Green Products in Compliance with the RoHS Directive
Features